IRLU024NPBF vs IRFR5505TRPBF तुलना
विस्तृत दोनों ओर की तुलना IRLU024NPBF द्वारा Infineon और IRFR5505TRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRLU024NPBF | IRFR5505TRPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | — |
| Technology | HEXFET Power MOSFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | -18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | -72 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 21.3 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | 50 C/W (typical, DPAK on 1 oz copper) |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | -55 C to +175 C |
| पैकेज | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK), surface mount |
| माउंटिंग प्रकार | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| RoHS स्थिति | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |