IRLU024NPBF vs IRFR5505TRPBF Perbandingan
Perbandingan bersamaan detil IRLU024NPBF dari Infineon dan IRFR5505TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLU024NPBF | IRFR5505TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | — |
| Technology | HEXFET Power MOSFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | -18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | -72 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 21.3 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | 50 C/W (typical, DPAK on 1 oz copper) |
| Suhu Hubung Kerja | -55C to +175C | -55 C to +175 C |
| Paket | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK), surface mount |
| Tipe Mounting | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Status RoHS | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |