IRLU024NPBF vs IRFR5505TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLU024NPBF sa pamamagitan ng Infineon at IRFR5505TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLU024NPBF | IRFR5505TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | — |
| Technology | HEXFET Power MOSFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | -18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | -72 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 21.3 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | 50 C/W (typical, DPAK on 1 oz copper) |
| Temperature ng Junction na Operasyon | -55C to +175C | -55 C to +175 C |
| Packhaging | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Tindminan RoHS | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |