K6X1008C2D-BF70 vs K6X1008C2D-GF70 तुलना
विस्तृत दोनों ओर की तुलना K6X1008C2D-BF70 द्वारा Samsung Electronics और K6X1008C2D-GF70 द्वारा Samsung Electronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Samsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndSamsung Electronics
K6X1008C2D-GF70 - 1Mbit 70ns 32-SOP Low Power SRAM | Samsung
K6X1008C2D-GF70 Obsoleteविशेषता तुलना
| पैरामीटर | K6X1008C2D-BF70 | K6X1008C2D-GF70 |
|---|---|---|
| ब्रांड | Samsung Electronics | Samsung Electronics |
| श्रेणी | Memory ICs | Memory ICs |
| लाइफसाइकिल स्थिति | NRND | Obsolete |
| मेमोरी प्रकार | Volatile SRAM (asynchronous, static) | Asynchronous SRAM (CMOS, Low Power) |
| Memory Organization | 128K x 8 (1 Mbit total) | — |
| Number of Words | 131,072 | — |
| Bits per Word | 8 | — |
| Access Time | 70 ns | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| इंटरफ़ेस प्रकार | Parallel, asynchronous | — |
| I/O Compatibility | TTL-compatible | — |
| Operating Mode | Fully static (no clock, no refresh) | — |
| Package Type | 32-SOP-525 (PDSO32) | — |
| Speed Grade Suffix | BF70 (= 70 ns) | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: temperature grade] | Commercial (I) / Automotive (a) - per ordering code |
| Active Supply Current (ICC) | [DATA_NEEDED: ICC max] | — |
| CMOS Standby Current (ICC2) | [DATA_NEEDED: ICC2 max] | — |
| Output Enable (OE) Pin | Yes (three-state outputs) | — |
| Write Enable (WE) Pin | Yes | — |
| Chip Enable (CE) Pin | Yes | — |
| Lead-Free Finish | Yes (per datasheet revision history) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Process Technology | Low-power CMOS | Samsung full CMOS (6T cell) |
| Memory Density | — | 1 Mbit (128K x 8) |
| संगठन | — | 128K x 8 |
| Access Time (tAA) | — | 70 ns |
| Operating Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current (Icc) | — | 35 mA |
| Data Retention Voltage | — | [DATA_NEEDED: data retention voltage minimum VccDR] |
| Data Retention Current | — | [DATA_NEEDED: data retention current at 3 V / 2 V] |
| पैकेज | — | 32-SOP (PDSO32, 0.525 inch, plastic) |
| इंटरफ़ेस | — | Parallel, asynchronous |
| आउटपुट प्रकार | — | Three-state bidirectional |
| Input/Output Logic | — | TTL-compatible |
| MSL स्तर | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS स्थिति | — | [DATA_NEEDED: RoHS compliance status from manufacturer] |
| Standby Mode | — | Chip Enable (CE) controlled |