K6X1008C2D-BF70 vs K6X1008C2D-GF70 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X1008C2D-BF70 sa pamamagitan ng Samsung Electronics at K6X1008C2D-GF70 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndSamsung Electronics
K6X1008C2D-GF70 - 1Mbit 70ns 32-SOP Low Power SRAM | Samsung
K6X1008C2D-GF70 ObsoletePagsanggunian na paghahambing
| Parametro | K6X1008C2D-BF70 | K6X1008C2D-GF70 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Uri ng Memory | Volatile SRAM (asynchronous, static) | Asynchronous SRAM (CMOS, Low Power) |
| Memory Organization | 128K x 8 (1 Mbit total) | — |
| Number of Words | 131,072 | — |
| Bits per Word | 8 | — |
| Access Time | 70 ns | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Uri ng Interface | Parallel, asynchronous | — |
| I/O Compatibility | TTL-compatible | — |
| Operating Mode | Fully static (no clock, no refresh) | — |
| Package Type | 32-SOP-525 (PDSO32) | — |
| Speed Grade Suffix | BF70 (= 70 ns) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: temperature grade] | Commercial (I) / Automotive (a) - per ordering code |
| Active Supply Current (ICC) | [DATA_NEEDED: ICC max] | — |
| CMOS Standby Current (ICC2) | [DATA_NEEDED: ICC2 max] | — |
| Output Enable (OE) Pin | Yes (three-state outputs) | — |
| Write Enable (WE) Pin | Yes | — |
| Chip Enable (CE) Pin | Yes | — |
| Lead-Free Finish | Yes (per datasheet revision history) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | Low-power CMOS | Samsung full CMOS (6T cell) |
| Memory Density | — | 1 Mbit (128K x 8) |
| Organisasyon | — | 128K x 8 |
| Access Time (tAA) | — | 70 ns |
| Operating Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current (Icc) | — | 35 mA |
| Data Retention Voltage | — | [DATA_NEEDED: data retention voltage minimum VccDR] |
| Data Retention Current | — | [DATA_NEEDED: data retention current at 3 V / 2 V] |
| Packhaging | — | 32-SOP (PDSO32, 0.525 inch, plastic) |
| Interface | — | Parallel, asynchronous |
| Type ng Output | — | Three-state bidirectional |
| Input/Output Logic | — | TTL-compatible |
| Level ng MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS compliance status from manufacturer] |
| Standby Mode | — | Chip Enable (CE) controlled |