MRF377HR3 vs MRFE6S9160HSR3 तुलना
विस्तृत दोनों ओर की तुलना MRF377HR3 द्वारा NXP Semiconductors और MRFE6S9160HSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MRF377HR3 | MRFE6S9160HSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| ट्रांज़िस्टर प्रकार | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Technology | Lateral RF Power MOSFET (Silicon) | HV6E (6th gen high-voltage LDMOS) |
| Frequency Range | 470 MHz to 860 MHz | — |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | 31% (typical at 35 W avg.) |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| पैकेज | NI-860C3 (ceramic flange) | NI-780S (NI780HS) ceramic, bolted flange |
| माउंटिंग प्रकार | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Through-hole / chassis mount with flange |
| ऑपरेटिंग तापमान | -40 C to +200 C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | — |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| ड्रेन-सोर्स ब्रेकडाउन वोल्टेज | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| RoHS स्थिति | — | [DATA_NEEDED: confirm via latest distributor listing] |