MRF377HR3 vs MRFE6S9160HSR3 Perbandingan
Perbandingan bersamaan detil MRF377HR3 dari NXP Semiconductors dan MRFE6S9160HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF377HR3 | MRFE6S9160HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Technology | Lateral RF Power MOSFET (Silicon) | HV6E (6th gen high-voltage LDMOS) |
| Frequency Range | 470 MHz to 860 MHz | — |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | 31% (typical at 35 W avg.) |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| Paket | NI-860C3 (ceramic flange) | NI-780S (NI780HS) ceramic, bolted flange |
| Tipe Mounting | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Through-hole / chassis mount with flange |
| Suhu Kerja | -40 C to +200 C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | — |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Tegangan Pemisah Sumber | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Status RoHS | — | [DATA_NEEDED: confirm via latest distributor listing] |