MRF5S19060MR1 vs MRF5S19060NBR1 तुलना
विस्तृत दोनों ओर की तुलना MRF5S19060MR1 द्वारा NXP Semiconductors और MRF5S19060NBR1 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF5S19060MR1 | MRF5S19060NBR1 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S19060MR1 | — |
| ट्रांज़िस्टर प्रकार | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| पैकेज | TO-270 WB-4 (Ceramic) | TO-272 WB-4 (overmolded plastic) |
| माउंटिंग प्रकार | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Test Signal | 2 x N-CDMA | — |
| MSL स्तर | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Operating Class | Class AB | — |
| Configuration | — | Dual Die (2 x N), Common Source |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| पिन काउंट | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |