MRF8S9170NR3 vs MRF8S9102NR3 तुलना
विस्तृत दोनों ओर की तुलना MRF8S9170NR3 द्वारा NXP Semiconductors और MRF8S9102NR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MRF8S9170NR3 | MRF8S9102NR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Technology | RF Power LDMOS | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| पैकेज | OM-780-2 (ceramic flange) | OM-780-2 (3-pin ceramic, flange mount) |
| माउंटिंग प्रकार | Surface Mount / Flange Mount (bolt-down thermal pad) | Chassis / flange mount with bolt-down thermal pad |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | — |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 920 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| पिन काउंट | — | 3 |
| RoHS स्थिति | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |