MRF8S9170NR3 vs MRF8S9102NR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF8S9170NR3 tarafından NXP Semiconductors ve MRF8S9102NR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF8S9170NR3 | MRF8S9102NR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Transistor Türü | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Technology | RF Power LDMOS | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Paket | OM-780-2 (ceramic flange) | OM-780-2 (3-pin ceramic, flange mount) |
| Montaj Türü | Surface Mount / Flange Mount (bolt-down thermal pad) | Chassis / flange mount with bolt-down thermal pad |
| İşletim Sıcaklığı | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | — |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 920 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Pin Sayısı | — | 3 |
| RoHS Durumu | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |