MRFE6S9135HSR3 vs MRFE6S9135HR3 तुलना
विस्तृत दोनों ओर की तुलना MRFE6S9135HSR3 द्वारा NXP Semiconductors और MRFE6S9135HR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRFE6S9135HSR3 | MRFE6S9135HR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| ट्रांज़िस्टर प्रकार | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency | 940 MHz (designed up to 1000 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1 A | 1 A |
| Power Gain (Gps) | 21 dB | 21 dB (typical at 940 MHz) |
| Output Power (Pout) | 39 W average (single W-CDMA, 940 MHz) | 39 W (at 940 MHz, two-tone test) |
| Drain-Source Voltage Rating | 66 V | — |
| Drain Current Rating | 10 µA (leakage spec from cross-reference) | — |
| पैकेज / केस | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads | — |
| माउंटिंग प्रकार | Through-hole / chassis-mount with flange bolt-down | Screw-mount / bolt-down flange |
| Input / Output Impedance | [DATA_NEEDED: input/output impedance at 940 MHz test condition] | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] | 63.3 % (typical at test conditions) |
| ऑपरेटिंग जंक्शन तापमान | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) | — |
| Lead Free Status | Lead Free | — |
| RoHS स्थिति | Compliant per NXP product page | [DATA_NEEDED: RoHS status] |
| नमी संवेदनशीलता स्तर (MSL) | [DATA_NEEDED: MSL rating from datasheet] | — |
| Packaging | Tape & Reel (suffix R3, 250-unit per reel) | — |
| Technology | — | RF Power LDMOS |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |