MRFE6S9135HSR3 vs MRFE6S9135HR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRFE6S9135HSR3 disebabkan oleh NXP Semiconductors dan MRFE6S9135HR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ AktifPengandingan Spesifikasi
| Parametr | MRFE6S9135HSR3 | MRFE6S9135HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Jenis Transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency | 940 MHz (designed up to 1000 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1 A | 1 A |
| Power Gain (Gps) | 21 dB | 21 dB (typical at 940 MHz) |
| Output Power (Pout) | 39 W average (single W-CDMA, 940 MHz) | 39 W (at 940 MHz, two-tone test) |
| Drain-Source Voltage Rating | 66 V | — |
| Drain Current Rating | 10 µA (leakage spec from cross-reference) | — |
| Kemasan / Case | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads | — |
| Jenis Pemasangan | Through-hole / chassis-mount with flange bolt-down | Screw-mount / bolt-down flange |
| Input / Output Impedance | [DATA_NEEDED: input/output impedance at 940 MHz test condition] | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] | 63.3 % (typical at test conditions) |
| Suhu Hubungan Operasi | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) | — |
| Lead Free Status | Lead Free | — |
| Status RoHS | Compliant per NXP product page | [DATA_NEEDED: RoHS status] |
| Tingkat sensitiviti Air Nama (MSL) | [DATA_NEEDED: MSL rating from datasheet] | — |
| Packaging | Tape & Reel (suffix R3, 250-unit per reel) | — |
| Technology | — | RF Power LDMOS |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |