MRFE6S9135HSR3 vs MRFE6S9135HR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRFE6S9135HSR3 tarafından NXP Semiconductors ve MRFE6S9135HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRFE6S9135HSR3 | MRFE6S9135HR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Transistor Türü | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency | 940 MHz (designed up to 1000 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1 A | 1 A |
| Power Gain (Gps) | 21 dB | 21 dB (typical at 940 MHz) |
| Output Power (Pout) | 39 W average (single W-CDMA, 940 MHz) | 39 W (at 940 MHz, two-tone test) |
| Drain-Source Voltage Rating | 66 V | — |
| Drain Current Rating | 10 µA (leakage spec from cross-reference) | — |
| Paket / Kas | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads | — |
| Montaj Türü | Through-hole / chassis-mount with flange bolt-down | Screw-mount / bolt-down flange |
| Input / Output Impedance | [DATA_NEEDED: input/output impedance at 940 MHz test condition] | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] | 63.3 % (typical at test conditions) |
| İşletim Jant Sıcaklığı | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) | — |
| Lead Free Status | Lead Free | — |
| RoHS Durumu | Compliant per NXP product page | [DATA_NEEDED: RoHS status] |
| Nem Hassasiyet Seviyesi (MSL) | [DATA_NEEDED: MSL rating from datasheet] | — |
| Packaging | Tape & Reel (suffix R3, 250-unit per reel) | — |
| Technology | — | RF Power LDMOS |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |