RTAX2000DL-1CQ352V vs RTAX2000DL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000DL-1CQ352V द्वारा Microchip Technology और RTAX2000DL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000DL-1CQ352V | RTAX2000DL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| Technology | Digital CMOS | CMOS, antifuse (nonvolatile, one-time programmable) |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live-at-power-up (antifuse, no external boot device) |
| Speed Grade | -1 | — |
| पैकेज | CQ352 (352-pin ceramic QFP) | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature] | -55C to +125C |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Terminal Pitch | — | 0.500 mm |