RTAX2000S-1CGS624EV vs RTAX2000SL-CGS624V तुलना

विस्तृत दोनों ओर की तुलना RTAX2000S-1CGS624EV द्वारा Microchip Technology और RTAX2000SL-CGS624V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Microchip Technology
RTAX2000S-1CGS624EV RTAX2000S-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624EV ✓ सक्रिय
Microchip Technology
RTAX2000SL-CGS624V RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V ✓ सक्रिय

विशेषता तुलना

पैरामीटर RTAX2000S-1CGS624EV RTAX2000SL-CGS624V
ब्रांड Microchip Technology Microchip Technology
श्रेणी FPGA & CPLD FPGA & CPLD
लाइफसाइकिल स्थिति सक्रिय सक्रिय
System Gates 2,000,000 —
Logic Cells (CLBs) 21504 21504
Total Cells 32256 —
Additional ASIC Equivalent Gates 250000 —
पैकेज 624-pin Ceramic Column Grid Array (CGA-624 / CCGA624) CG624 ceramic package
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) [DATA_NEEDED: core supply voltage]
ऑपरेटिंग तापमान -55C to +125C [DATA_NEEDED: operating temperature range]
Process Technology 0.15 um CMOS —
Maximum Frequency 649 MHz —
Logic Family CMOS —
SEU Immunity SEU-hardened registers, immune to single-event upsets to specified LET threshold —
SEU Rate < 10-10 errors/bit-day —
Configuration One-time programmable anti-fuse, live at power-up, single chip One-time programmable antifuse, live at power-up
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits with optional EDAC protection
माउंटिंग प्रकार Surface Mount —
Product Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Thermal Resistance Basis JEDEC JESD51 simulation conditions (per datasheet) —
I/O Supply Voltage [DATA_NEEDED: I/O bank voltage] [DATA_NEEDED: I/O supply voltage]
Maximum User I/O [DATA_NEEDED: user I/O count] —
RoHS स्थिति [DATA_NEEDED: RoHS status] —
Equivalent System Gates — 2000000
Technology — CMOS antifuse (nonvolatile)
User I/Os (maximum) — 684
Total Ionizing Dose (TID) — 300 krad (Si) functional / 200 krad (Si) parametric
Single-Event Upset Rate — Less than 1E-10 errors per bit-day
Embedded SRAM Features — Built-in FIFO control logic
Clock Architecture — Segmentable clock structures
Routing — Chip-wide highway routing, carry logic
Family — RTAX-S/SL Radiation-Tolerant FPGA
Application Domain — Space-flight systems
Speed Grade — [DATA_NEEDED: speed grade]
System Frequency (typical) — [DATA_NEEDED: system frequency]

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