RTAX2000S-1CGS624EV vs RTAX2000SL-CGS624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000S-1CGS624EV sa pamamagitan ng Microchip Technology at RTAX2000SL-CGS624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000S-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CGS624EV ✓ NakahandaMicrochip Technology
RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-CGS624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000S-1CGS624EV | RTAX2000SL-CGS624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| System Gates | 2,000,000 | — |
| Logic Cells (CLBs) | 21504 | 21504 |
| Total Cells | 32256 | — |
| Additional ASIC Equivalent Gates | 250000 | — |
| Packhaging | 624-pin Ceramic Column Grid Array (CGA-624 / CCGA624) | CG624 ceramic package |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | [DATA_NEEDED: core supply voltage] |
| Temperature na Operasyon | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Process Technology | 0.15 um CMOS | — |
| Maximum Frequency | 649 MHz | — |
| Logic Family | CMOS | — |
| SEU Immunity | SEU-hardened registers, immune to single-event upsets to specified LET threshold | — |
| SEU Rate | < 10-10 errors/bit-day | — |
| Configuration | One-time programmable anti-fuse, live at power-up, single chip | One-time programmable antifuse, live at power-up |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits with optional EDAC protection |
| Uri ng Pagpapasok | Surface Mount | — |
| Product Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Thermal Resistance Basis | JEDEC JESD51 simulation conditions (per datasheet) | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O bank voltage] | [DATA_NEEDED: I/O supply voltage] |
| Maximum User I/O | [DATA_NEEDED: user I/O count] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Equivalent System Gates | — | 2000000 |
| Technology | — | CMOS antifuse (nonvolatile) |
| User I/Os (maximum) | — | 684 |
| Total Ionizing Dose (TID) | — | 300 krad (Si) functional / 200 krad (Si) parametric |
| Single-Event Upset Rate | — | Less than 1E-10 errors per bit-day |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clock Architecture | — | Segmentable clock structures |
| Routing | — | Chip-wide highway routing, carry logic |
| Family | — | RTAX-S/SL Radiation-Tolerant FPGA |
| Application Domain | — | Space-flight systems |
| Speed Grade | — | [DATA_NEEDED: speed grade] |
| System Frequency (typical) | — | [DATA_NEEDED: system frequency] |