STS5DNF60L vs IRF7319TRPBF तुलना
विस्तृत दोनों ओर की तुलना STS5DNF60L द्वारा STMicroelectronics और IRF7319TRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | STS5DNF60L | IRF7319TRPBF |
|---|---|---|
| ब्रांड | STMicroelectronics | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel | — |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) value] | — |
| Gate Charge Q_g | [DATA_NEEDED: Q_g total gate charge value] | — |
| Technology | STripFET II trench N-channel | IR MOSFET / Fifth Generation HEXFET |
| Configuration | Dual independent N-channel | N-Channel + P-Channel (complementary half-bridge) |
| पैकेज | SO-8 (8-SOIC, surface mount) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature min/max] | -55C to +150C (junction) |
| Automotive Grade | Automotive-grade qualified | — |
| RoHS Compliance | Compliant | — |
| Avalanche Rating | 100% avalanche tested | — |
| MSL स्तर | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |