STS5DNF60L vs IRF7319TRPBF 比較

詳細並排比較 STS5DNF60L 由 STMicroelectronics 與 IRF7319TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 STS5DNF60L IRF7319TRPBF
品牌 STMicroelectronics Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at 25 °C 5 A per channel —
On-Resistance R_DS(on) (typ.) 35 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) (max) 45 mΩ at V_GS = 10 V, I_D = 2 A —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) value] —
Gate Charge Q_g [DATA_NEEDED: Q_g total gate charge value] —
Technology STripFET II trench N-channel IR MOSFET / Fifth Generation HEXFET
Configuration Dual independent N-channel N-Channel + P-Channel (complementary half-bridge)
封裝 SO-8 (8-SOIC, surface mount) —
安裝類型 Surface Mount Surface Mount
Power Dissipation P_D (per datasheet) 2 W —
工作溫度範圍 [DATA_NEEDED: operating temperature min/max] -55C to +150C (junction)
Automotive Grade Automotive-grade qualified —
RoHS Compliance Compliant —
Avalanche Rating 100% avalanche tested —
MSL 等級 [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Packaging — Tape & Reel (TR suffix)

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