STS5DNF60L vs IRF7319TRPBF Perbandingan
Perbandingan bersamaan detil STS5DNF60L dari STMicroelectronics dan IRF7319TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | STS5DNF60L | IRF7319TRPBF |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel | — |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) value] | — |
| Gate Charge Q_g | [DATA_NEEDED: Q_g total gate charge value] | — |
| Technology | STripFET II trench N-channel | IR MOSFET / Fifth Generation HEXFET |
| Configuration | Dual independent N-channel | N-Channel + P-Channel (complementary half-bridge) |
| Paket | SO-8 (8-SOIC, surface mount) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature min/max] | -55C to +150C (junction) |
| Automotive Grade | Automotive-grade qualified | — |
| RoHS Compliance | Compliant | — |
| Avalanche Rating | 100% avalanche tested | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |