STW45NM60 vs STW45NM60-H तुलना
विस्तृत दोनों ओर की तुलना STW45NM60 द्वारा STMicroelectronics और STW45NM60-H द्वारा STMicroelectronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ सक्रियविशेषता तुलना
| पैरामीटर | STW45NM60 | STW45NM60-H |
|---|---|---|
| ब्रांड | STMicroelectronics | STMicroelectronics |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | MDmesh Power MOSFET | MDmesh (super-junction) |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: maximum Vgs rating] | — |
| Continuous Drain Current (Id) at Tc=25°C | 45 A | — |
| Typical Rds(on) at Vgs=10V | 90 mΩ | — |
| Typical Rds(on) at Vgs=4.5V | 110 mΩ | — |
| Maximum Power Dissipation (Pd) at Tc=25°C | 417 W | — |
| ऑपरेटिंग तापमान रेंज | -65 °C to +150 °C (junction) | -55 °C to +150 °C (TJ) |
| पैकेज | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Channel Type | N-Channel | — |
| Configuration | Single FET | — |
| dv/dt Capability | Outstanding (MDmesh process) | High |
| Avalanche Ruggedness | Excellent | — |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | — | 45 A at Tc = 25 °C |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) | — | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | — | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 4 V typical |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Avalanche Rating | — | 100% avalanche tested |