STW45NM60 vs STW45NM60-H Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STW45NM60 disebabkan oleh STMicroelectronics dan STW45NM60-H disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ AktifPengandingan Spesifikasi
| Parametr | STW45NM60 | STW45NM60-H |
|---|---|---|
| Merek | STMicroelectronics | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | MDmesh Power MOSFET | MDmesh (super-junction) |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: maximum Vgs rating] | — |
| Continuous Drain Current (Id) at Tc=25°C | 45 A | — |
| Typical Rds(on) at Vgs=10V | 90 mΩ | — |
| Typical Rds(on) at Vgs=4.5V | 110 mΩ | — |
| Maximum Power Dissipation (Pd) at Tc=25°C | 417 W | — |
| Gambaran Suhu Operasi | -65 °C to +150 °C (junction) | -55 °C to +150 °C (TJ) |
| Kemasan | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Channel Type | N-Channel | — |
| Configuration | Single FET | — |
| dv/dt Capability | Outstanding (MDmesh process) | High |
| Avalanche Ruggedness | Excellent | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | — | 45 A at Tc = 25 °C |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) | — | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | — | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 4 V typical |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Avalanche Rating | — | 100% avalanche tested |