STW45NM60 vs STW45NM60-H Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng STW45NM60 sa pamamagitan ng STMicroelectronics at STW45NM60-H sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

STMicroelectronics
STW45NM60 STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro STW45NM60 STW45NM60-H
Brand STMicroelectronics STMicroelectronics
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology MDmesh Power MOSFET MDmesh (super-junction)
Drain-Source Voltage (Vdss) 600 V —
Gate-Source Voltage (Vgs) [DATA_NEEDED: maximum Vgs rating] —
Continuous Drain Current (Id) at Tc=25°C 45 A —
Typical Rds(on) at Vgs=10V 90 mΩ —
Typical Rds(on) at Vgs=4.5V 110 mΩ —
Maximum Power Dissipation (Pd) at Tc=25°C 417 W —
Hanay ng Temperature na Operasyon -65 °C to +150 °C (junction) -55 °C to +150 °C (TJ)
Packhaging TO-247-3 (through-hole) TO-247-3 (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Channel Type N-Channel —
Configuration Single FET —
dv/dt Capability Outstanding (MDmesh process) High
Avalanche Ruggedness Excellent —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V (650 V at TJMAX)
Continuous Drain Current (ID) — 45 A at Tc = 25 °C
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) — 417 W at Tc = 25 °C
On-Resistance (RDS(on)) — 0.09 Ω typical at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 4 V typical
Gate Charge (Qg) — [DATA_NEEDED: typical total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Avalanche Rating — 100% avalanche tested

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