1EDN7136GXTMA1 vs 1EDN7146GXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7136GXTMA1 dari Infineon dan 1EDN7146GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 1EDN7136GXTMA1 1EDN7146GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Low-side gate driver IC —
Configuration Single channel, non-inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Target Switch GaN HEMT (CoolGaN) / MOSFET —
Input Logic TTL/CMOS compatible —
UVLO Yes (VDD under-voltage lockout) —
Propagation Delay Sub-nanosecond class —
Paket PG-VSON-10-4 (leadless, thermal pad) PG-VSON-10-4
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +125 C -40 C to +125 C
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-free Yes —
Input Voltage (VDD) [DATA_NEEDED: VDD range V] —
Output Voltage (GaN gate) Approximately 6 V (regulated) —
Driver Type — High-side, single-channel
Number of Drivers — 1
Logic Type — Non-Inverting
Input Type — TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated

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