1N6263 vs 1N5711SB Perbandingan

Perbandingan bersamaan detil 1N6263 dari STMicroelectronics dan 1N5711SB dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1N6263 1N5711SB
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky (metal-to-silicon junction) Small Signal Schottky Barrier Diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) Ultrafast (Schottky, no stored charge)
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Paket DO-35 (axial, through-hole glass) DO-35 (SOD-27) hermetic glass axial
Tipe Mounting Through Hole Through Hole
Number of Elements 1 —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Peak Reverse Voltage (VRRM) — 70 V
Average Forward Current (IF(AV)) — 15 mA
Reverse Current (IR) — [DATA_NEEDED: reverse current at rated VR]
Junction Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Configuration — Single
Junction Material — Metal-to-silicon junction
Primary Applications — UHF/VHF detection, mixing, switching, pulse shaping
Suhu Kerja — [DATA_NEEDED: operating temperature range]
Matched Batches — Available on request (ST)

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