1N6263 vs 1N5711SB 比較
詳細並排比較 1N6263 由 STMicroelectronics 與 1N5711SB 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1N6263 | 1N5711SB |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Diode Type | Small Signal Schottky (metal-to-silicon junction) | Small Signal Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Forward Current (IF) | 15 mA | — |
| Power Dissipation | 400 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) | Ultrafast (Schottky, no stored charge) |
| Surge Current Rating (IFSM) | [DATA_NEEDED: surge current] | — |
| Technology | Guard-ring Schottky barrier | — |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range | — |
| 封裝 | DO-35 (axial, through-hole glass) | DO-35 (SOD-27) hermetic glass axial |
| 安裝類型 | Through Hole | Through Hole |
| Number of Elements | 1 | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Average Forward Current (IF(AV)) | — | 15 mA |
| Reverse Current (IR) | — | [DATA_NEEDED: reverse current at rated VR] |
| Junction Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Configuration | — | Single |
| Junction Material | — | Metal-to-silicon junction |
| Primary Applications | — | UHF/VHF detection, mixing, switching, pulse shaping |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Matched Batches | — | Available on request (ST) |