1N6263 vs 1N5711SB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N6263 disebabkan oleh STMicroelectronics dan 1N5711SB disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1N6263 1N5711SB
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky (metal-to-silicon junction) Small Signal Schottky Barrier Diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) Ultrafast (Schottky, no stored charge)
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Kemasan DO-35 (axial, through-hole glass) DO-35 (SOD-27) hermetic glass axial
Jenis Pemasangan Through Hole Through Hole
Number of Elements 1 —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Peak Reverse Voltage (VRRM) — 70 V
Average Forward Current (IF(AV)) — 15 mA
Reverse Current (IR) — [DATA_NEEDED: reverse current at rated VR]
Junction Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Configuration — Single
Junction Material — Metal-to-silicon junction
Primary Applications — UHF/VHF detection, mixing, switching, pulse shaping
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Matched Batches — Available on request (ST)

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