1N6263 vs 1N5711SB Comparação
Comparação detalhada lado a lado de 1N6263 por STMicroelectronics e 1N5711SB por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | 1N6263 | 1N5711SB |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoria | Diodes | Diodes |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,12 | $0,11 |
| Diode Type | Small Signal Schottky (metal-to-silicon junction) | Small Signal Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | — |
| Average Forward Current (IF) | 15 mA | — |
| Power Dissipation | 400 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) | Ultrafast (Schottky, no stored charge) |
| Surge Current Rating (IFSM) | [DATA_NEEDED: surge current] | — |
| Technology | Guard-ring Schottky barrier | — |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range | — |
| Encapsulamento | DO-35 (axial, through-hole glass) | DO-35 (SOD-27) hermetic glass axial |
| Tipo de montagem | Through Hole | Through Hole |
| Number of Elements | 1 | — |
| Faixa de temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Average Forward Current (IF(AV)) | — | 15 mA |
| Reverse Current (IR) | — | [DATA_NEEDED: reverse current at rated VR] |
| Junction Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Configuration | — | Single |
| Junction Material | — | Metal-to-silicon junction |
| Primary Applications | — | UHF/VHF detection, mixing, switching, pulse shaping |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| Matched Batches | — | Available on request (ST) |