1N6263 vs 1N5711SB Karşılaştırma

Ayrıntılı yan yana karşılaştırma 1N6263 tarafından STMicroelectronics ve 1N5711SB tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 1N6263 1N5711SB
Marka STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small Signal Schottky (metal-to-silicon junction) Small Signal Schottky Barrier Diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) Ultrafast (Schottky, no stored charge)
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Paket DO-35 (axial, through-hole glass) DO-35 (SOD-27) hermetic glass axial
Montaj Türü Through Hole Through Hole
Number of Elements 1 —
İşletim Sıcaklığı Aralığı [DATA_NEEDED: operating temperature range] —
RoHS Durumu [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Peak Reverse Voltage (VRRM) — 70 V
Average Forward Current (IF(AV)) — 15 mA
Reverse Current (IR) — [DATA_NEEDED: reverse current at rated VR]
Junction Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Configuration — Single
Junction Material — Metal-to-silicon junction
Primary Applications — UHF/VHF detection, mixing, switching, pulse shaping
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]
Matched Batches — Available on request (ST)

Dökümanlar & Kaynaklar

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