2ED21064S06JXUMA1 vs 1ED3142MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED21064S06JXUMA1 dari Infineon dan 1ED3142MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED21064S06JXUMA1 1ED3142MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-Side and Low-Side Gate Driver —
Configuration Half-Bridge (2 outputs, non-inverting) Inverting, Non-Inverting
Topologi High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated —
Input Logic Compatibility 3.3 V / 5 V CMOS —
Suhu Kerja -40C to +125C —
Paket PG-DSO-14 (14-pin SOIC) PG-DSO-8 (PG-LDSO-8-1)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS ROHS3 Compliant —
Negative Gate Drive Robustness -0.7 V —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Jumlah Output — 2 (separate source/sink)
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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