2ED2108S06FXUMA1 vs 1EDN7146GXTMA1 Perbandingan

Perbandingan bersamaan detil 2ED2108S06FXUMA1 dari Infineon dan 1EDN7146GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 2ED2108S06FXUMA1 1EDN7146GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 1
Gate Type N-Channel MOSFET, IGBT —
Jumlah Output 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket PG-DSO-8-53 (DSO-8) PG-VSON-10-4
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 1
Status RoHS Compliant Compliant
Driver Type — High-side, single-channel
Logic Type — Non-Inverting
Input Type — TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated

Spek dan Sumber

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