2ED2108S06FXUMA1 vs 1EDN7146GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2108S06FXUMA1 disebabkan oleh Infineon dan 1EDN7146GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr 2ED2108S06FXUMA1 1EDN7146GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 1
Gate Type N-Channel MOSFET, IGBT —
Bilangan Output 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Operasi -40 C to +125 C -40 C to +125 C
Kemasan PG-DSO-8-53 (DSO-8) PG-VSON-10-4
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1
Status RoHS Compliant Compliant
Driver Type — High-side, single-channel
Logic Type — Non-Inverting
Input Type — TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated

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