2ED2304S06FXUMA1 vs IR2304SPBF Perbandingan

Perbandingan bersamaan detil 2ED2304S06FXUMA1 dari Infineon dan IR2304SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2304S06FXUMA1 IR2304SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI HVIC + Latch-Immune CMOS, Monolithic
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V, 5 V, 15 V
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) —
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) Both High-Side and Low-Side Channels
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Rentang Suhu Kerja -40C to +125C -40 C to +125 C
Paket PG-DSO-8-910 (DSO-8) 8-Pin SOIC (SO-8 N)
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 —
Status RoHS Compliant Compliant (Pb-free)
Product Type — Half-Bridge Gate Driver IC
Configuration — High and Low Side, Independent Channels
Jumlah Output — 2
Maximum Offset (Bootstrap) Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source/Sink Current — 60 mA / 130 mA
Propagation Delay (Typical) — 220 ns
Negative Transient Voltage Tolerance — Yes (dV/dt immune)
Logic Input Polarity — Non-Inverting

Spek dan Sumber

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