2EDB9259YXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDB9259YXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDB9259YXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated gate driver IC —
Number of Channels 2 (dual) —
Topology Support Half-bridge / High-side + Low-side —
Peak Source Current 5 A 13.5 A
Peak Sink Current 9 A 14 A
Isolation Voltage (Vrms) 3000 Vrms —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typ) 38 ns —
Channel-to-Channel Delay Matching [DATA_NEEDED: delay matching spec] —
VCC Operating Range 4.5 V to 18 V —
VCC Absolute Maximum 36 V —
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-14 (150 mil DSO wide-body) PG-DSO-8 (DSO-8)
Package Pin Count 14 —
Rentang Suhu Kerja -40C to +125C —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Jumlah Output — 1
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Waktu naik — 15 ns
Waktu Menurun — 30 ns
Suhu Kerja — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon