2EDL8123GXUMA1 vs 2ED2183S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8123GXUMA1 dari Infineon dan 2ED2183S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8123GXUMA1 2ED2183S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Input Type Non-Inverting Non-Inverting
Number of Drivers 2 1
Maximum Bootstrap Voltage (V_BS) 120 V —
Source Current (I_source, typical) 3 A —
Sink Current (I_sink, typical) 4 A —
Supply Voltage (V_CC) [DATA_NEEDED: V_CC range] —
UVLO Protection Yes (V_CC and V_BS) —
Bootstrap Diode Integrated Integrated
Isolation Type Junction-Isolated (JI) —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket PG-VDSON-8-4 (VSON-8 with thermal pad) PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Propagation Delay [DATA_NEEDED: t_on / t_off] —
Logic Input Compatibility TTL/CMOS —
Level MSL [DATA_NEEDED: MSL rating] 2
Status RoHS Compliant Compliant
Lead-Free Yes —
Driver Type — Half-Bridge Gate Driver
Jumlah Output — 1 (half-bridge: high-side + low-side)
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Waktu naik — 15 ns
Waktu Menurun — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Undervoltage Lockout (UVLO) — VCC and VBS
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon