2EDL8124GXUMA1 vs 1ED3142MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 2EDL8124GXUMA1 dari Infineon dan 1ED3142MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
2EDL8124GXUMA1 ✓ AktifInfineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | 2EDL8124GXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Configuration | Half-bridge (high-side + low-side) | — |
| Input Type | Non-inverting, TTL-compatible with hysteresis | — |
| Number of Drivers | 2 | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Bootstrap Supply (VBS) Maximum | 120 V | — |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | — |
| Isolation Type | Junction isolation (JI) | — |
| Bootstrap Diode | Integrated | — |
| Propagation Delay (typical) | < 50 ns | — |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | — |
| UVLO | Present on VCC and VBS | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range in C] | — |
| Paket | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-DSO-8 (PG-LDSO-8-1) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Technology | — | Coreless transformer (galvanic) |
| Isolation Voltage | — | 3000 Vrms |
| Number of Channels | — | 1 |
| Jumlah Output | — | 2 (separate source/sink) |
| Configuration | — | Inverting, Non-Inverting |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |