2EDL8124GXUMA1 vs 1ED3142MC12HXUMA1 比較

詳細並排比較 2EDL8124GXUMA1 由 Infineon 與 1ED3142MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2EDL8124GXUMA1 1ED3142MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis —
Number of Drivers 2 —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated —
Propagation Delay (typical) < 50 ns —
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
工作溫度範圍 [DATA_NEEDED: operating temperature range in C] —
封裝 PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-DSO-8 (PG-LDSO-8-1)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
輸出數量 — 2 (separate source/sink)
Configuration — Inverting, Non-Inverting
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

資料表與資源

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