AFT26HW050GSR3 vs AFT26H050W26SR3 Perbandingan
Perbandingan bersamaan detil AFT26HW050GSR3 dari NXP Semiconductors dan AFT26H050W26SR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifNXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoletePerbandingan Spesifikasi
| Parameter Umum | AFT26HW050GSR3 | AFT26H050W26SR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | — |
| Family | Airfast RF Power | — |
| Paket / Case | NI-780GS-4L4L (9-pin, ceramic) | — |
| Tipe Mounting | Chassis Mount (bolt-down, flange) | Surface Mount / chassis-mount screw flange |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | Single, Asymmetrical Doherty |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | Metal-Oxide Semiconductor (LDMOS) |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Suhu Kerja | -40 C to +150 C | — |
| Tipe Transistor | — | N-Channel LDMOS, Enhancement Mode |
| Frequency Range | — | 2.496 GHz to 2.69 GHz |
| Average Output Power | — | 9 W |
| Test Voltage | — | 28 V |
| Test Current | — | 100 mA |
| Power Gain | — | 14.2 dB |
| Maximum Operating Temperature | — | 150 °C |
| Peak Reflow Temperature | — | 260 °C |
| Number of Elements | — | 1 |
| Paket | — | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | — | N-Channel |
| Supplier Device Package | — | NI-780S-4L4L-8 |