AFT26HW050GSR3 vs AFT26H050W26SR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AFT26HW050GSR3 disebabkan oleh NXP Semiconductors dan AFT26H050W26SR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifNXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoletePengandingan Spesifikasi
| Parametr | AFT26HW050GSR3 | AFT26H050W26SR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | — |
| Family | Airfast RF Power | — |
| Kemasan / Case | NI-780GS-4L4L (9-pin, ceramic) | — |
| Jenis Pemasangan | Chassis Mount (bolt-down, flange) | Surface Mount / chassis-mount screw flange |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | 65 V |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | Single, Asymmetrical Doherty |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | Metal-Oxide Semiconductor (LDMOS) |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| Suhu Operasi | -40 C to +150 C | — |
| Jenis Transistor | — | N-Channel LDMOS, Enhancement Mode |
| Frequency Range | — | 2.496 GHz to 2.69 GHz |
| Average Output Power | — | 9 W |
| Test Voltage | — | 28 V |
| Test Current | — | 100 mA |
| Power Gain | — | 14.2 dB |
| Maximum Operating Temperature | — | 150 °C |
| Peak Reflow Temperature | — | 260 °C |
| Number of Elements | — | 1 |
| Kemasan | — | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | — | N-Channel |
| Supplier Device Package | — | NI-780S-4L4L-8 |