BFU520W vs BFU520R Perbandingan
Perbandingan bersamaan detil BFU520W dari NXP Semiconductors dan BFU520R dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BFU520W | BFU520R |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | NPN | — |
| Technology | Silicon wideband RF BJT | — |
| Application Frequency Range | Up to 2 GHz | — |
| Paket | SOT323 (3-pin plastic) | SOT-143B (4-pin, dual-emitter, plastic) |
| Tipe Mounting | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| Tegangan Pemisah-Penjana (Vceo) | [DATA_NEEDED: VCEO] | 12 V |
| Tegangan Dasar Pemisah (Vcbo) | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | — |
| Frekuensi Transisi (ft) | [DATA_NEEDED: fT] | 10.5 GHz |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| Tipe Transistor | — | NPN wideband silicon RF BJT |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Noise Figure | — | [DATA_NEEDED: noise figure in dB] |
| Gain | — | [DATA_NEEDED: gain] |