BFU520W vs BFU520R 比較
詳細並排比較 BFU520W 由 NXP Semiconductors 與 BFU520R 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BFU520W | BFU520R |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | NPN | — |
| Technology | Silicon wideband RF BJT | — |
| Application Frequency Range | Up to 2 GHz | — |
| 封裝 | SOT323 (3-pin plastic) | SOT-143B (4-pin, dual-emitter, plastic) |
| 安裝類型 | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| 集極-射極電壓 (Vceo) | [DATA_NEEDED: VCEO] | 12 V |
| 集極-基極電壓 (Vcbo) | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | — |
| 轉換頻率 (ft) | [DATA_NEEDED: fT] | 10.5 GHz |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| 工作溫度範圍 | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| 電晶體類型 | — | NPN wideband silicon RF BJT |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |
| Noise Figure | — | [DATA_NEEDED: noise figure in dB] |
| Gain | — | [DATA_NEEDED: gain] |