BFU520W vs BFU520R Karşılaştırma
Ayrıntılı yan yana karşılaştırma BFU520W tarafından NXP Semiconductors ve BFU520R tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BFU520W | BFU520R |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity | NPN | — |
| Technology | Silicon wideband RF BJT | — |
| Application Frequency Range | Up to 2 GHz | — |
| Paket | SOT323 (3-pin plastic) | SOT-143B (4-pin, dual-emitter, plastic) |
| Montaj Türü | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| Toplayıcı-Emisör Voltage (Vceo) | [DATA_NEEDED: VCEO] | 12 V |
| Toplayıcı-Basıt电压 (Vcbo) | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | — |
| Geçiş Frekansı (ft) | [DATA_NEEDED: fT] | 10.5 GHz |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| Transistor Türü | — | NPN wideband silicon RF BJT |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| RoHS Durumu | — | [DATA_NEEDED: RoHS status] |
| Noise Figure | — | [DATA_NEEDED: noise figure in dB] |
| Gain | — | [DATA_NEEDED: gain] |