BSC011N03LSATMA1 vs BSC0911NDATMA1 Perbandingan
Perbandingan bersamaan detil BSC011N03LSATMA1 dari Infineon dan BSC0911NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC011N03LSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | 30 A |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8-1 (SuperSO8) | PG-TISON-8 (8-PowerTDFN) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 25V |
| Configuration | — | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | — | 18 A |
| Power Dissipation (PD) | — | 1 W |
| Suhu Kerja | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Technology | — | OptiMOS trench MOSFET |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |