BSC011N03LSATMA1 vs BSC0911NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSATMA1 sa pamamagitan ng Infineon at BSC0911NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Nakahanda
Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC011N03LSATMA1 BSC0911NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) 30 A
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-1 (SuperSO8) PG-TISON-8 (8-PowerTDFN)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 25V
Configuration — Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) — 18 A
Power Dissipation (PD) — 1 W
Temperature na Operasyon — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Technology — OptiMOS trench MOSFET
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]

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