BSC014N04LS vs BSC014N04LSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC014N04LS dari Infineon dan BSC014N04LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LS | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| VDS Max | 40 V | — |
| RDS(on) Max | 1.4 mOhm | — |
| ID Max | 198 A | — |
| Paket | SuperSO8 5x6 (TDSON-8FL) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C | — |
| Configuration | Single MOSFET | — |
| Absolute Max Rating Condition | TC = 25C, de-rating required above | — |
| Thermal Test Condition | 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| VGS Max | [DATA_NEEDED: gate-source voltage max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation | [DATA_NEEDED: power dissipation] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Rentang Suhu Kerja | — | -55 C to +150 C |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |