BSC014N04LS vs BSC014N04LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LS disebabkan oleh Infineon dan BSC014N04LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N04LS | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| VDS Max | 40 V | — |
| RDS(on) Max | 1.4 mOhm | — |
| ID Max | 198 A | — |
| Kemasan | SuperSO8 5x6 (TDSON-8FL) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C | — |
| Configuration | Single MOSFET | — |
| Absolute Max Rating Condition | TC = 25C, de-rating required above | — |
| Thermal Test Condition | 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| VGS Max | [DATA_NEEDED: gate-source voltage max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation | [DATA_NEEDED: power dissipation] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |