BSC014N04LSATMA1 vs BSZ031NE2LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC014N04LSATMA1 dari Infineon dan BSZ031NE2LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LSATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS max] |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | [DATA_NEEDED: MSL] |
| Part Number | — | BSZ031NE2LS5ATMA1 |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |