BSC014N04LSIATMA1 vs IPB020N10N5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC014N04LSIATMA1 dari Infineon dan IPB020N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LSIATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Rentang Suhu Kerja | -55 C to +150 C | -55C to +175C |
| Paket | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TO263-3 (D2PAK-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB020N10N5ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |