BSC014N04LSTATMA1 vs ISZ019N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N04LSTATMA1 dari Infineon dan ISZ019N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC014N04LSTATMA1 ISZ019N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) —
Drain-Source Voltage (VDS) 40 V 30 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Rentang Suhu Kerja -55°C to +150°C -55C to +175C (TJ max)
Paket PG-TDSON-8 FL (SuperSO8 5x6) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant —
Level MSL MSL1 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 22 A
Continuous Drain Current (ID) at TC=25C — 40 A
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate Threshold Voltage (VGS(th)) — 2 V (typical)
Gate-Source Voltage Rating (VGS) — ±20 V
Total Gate Charge (Qg) — 44 nC at VGS=10V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

Spek dan Sumber

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