BSC014N04LSTATMA1 vs ISZ019N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSTATMA1 disebabkan oleh Infineon dan ISZ019N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014N04LSTATMA1 ISZ019N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) —
Drain-Source Voltage (VDS) 40 V 30 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Gambaran Suhu Operasi -55°C to +150°C -55C to +175C (TJ max)
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) PG-TSDSON-8-FL (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant —
Aras MSL MSL1 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 22 A
Continuous Drain Current (ID) at TC=25C — 40 A
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate Threshold Voltage (VGS(th)) — 2 V (typical)
Gate-Source Voltage Rating (VGS) — ±20 V
Total Gate Charge (Qg) — 44 nC at VGS=10V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

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