BSC014NE2LSIATMA1 vs BSF134N10NJ3GXUMA1 Perbandingan

Perbandingan bersamaan detil BSC014NE2LSIATMA1 dari Infineon dan BSF134N10NJ3GXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC014NE2LSIATMA1 BSF134N10NJ3GXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS 25V) Trench-gate OptiMOS planar
Drain-Source Voltage (VDS) 25 V 100 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Ta) 33 A —
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] —
Pulsed Drain Current (IDM, Tc) 100 A —
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 74 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TDSON-8-7 (SuperSO8) MG-WDSON-2 (CanPAK M)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 100 V
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Rentang Suhu Kerja — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

Spek dan Sumber

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